Effect of Mn doping on structural and magnetic properties of GaFeO3
作者： M. Bakr Mohamed , H. Fuess
DOI: 10.1016/J.JMMM.2011.03.019
关键词:
摘要: Abstract GaFe 1− x Mn O 3 polycrystalline materials have been prepared by a solid state reaction (SR) and the sol–gel (SG) method. The maximum content amounts up to 10% 40% for SR SG preparation, respectively. All compounds in these composition ranges crystallize space group P c 2 1 n derived from Rietveld refinement of X-ray powder patterns. gradual incorporation manganese is accompanied decrease cell volume. ferrimagnetic transition temperature T =282 K GaFeO decreases with reaches =149 K =0.4.
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