Deep Level Formation in Undoped and Oxygen-Doped GaN
作者： J. M. Gregie , R. Y. Korotkov , B. W. Wessels
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摘要: Deep level defects in oxygen doped GaN grown by metal-organic vapor phase epitaxy were investigated. Using steady-state photocapacitance (SSPC) spectroscopy, three deep levels with optical ionization energies of 1.0, 1.4, and 3.25 eV observed both nominally undoped oxygen-doped samples. The total defect concentrations ranged from 6 × 1015 cm−3 films to 3 1016 films. concentration the increased upon doping, while concentrationof 1.0 1.4 essentially dopant independent. From measured formation calculated compared using density functional theory.
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