作者: Jordi Guilera , Cristian Fàbrega , Olga Casals , Francisco Hernández-Ramírez , Shuangzhou Wang
DOI: 10.1016/J.SNB.2015.06.069
关键词:
摘要: The integration of one-dimensional (1D) nanostructures of non-industry-standard semiconductors in functional devices following bottom-up approaches is still an open challenge that hampers the exploitation of all their potential. Here, we present a simple approach to integrate metal oxide nanowires in electronic devices based on controlled dielectrophoretic positioning together with proof of concept devices that corroborate their functionality. The method is flexible enough to manipulate nanowires of different sizes and …