作者: W. Pitschke , A. Heinrich , J. Schumann
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摘要: The structure of the semiconducting ReSi/sub 2-/spl delta// phase formed in binary rhenium silicide thin films has been studied using X-ray powder diffraction. were deposited by magnetron cosputtering onto unheated, oxidized Si-wafers. Subsequent annealing results crystallization amorphous films. By means Rietveld analysis unit cell dimensions and atomic occupation factors crystalline phases have determined. After film at T=973 K a delta//-phase was chemical composition which determined to be 1.55/. Temperature enhancement gave rise increase Si resulting an 1.78/ T=1073 K. This crystallizes with primitive space group P1 a=0.3138 nm, b=0.3118 c=0.7688 nm /spl alpha/=89.83.