Structural and electronic transport properties of ReSi2−δ single crystals
作者： U. Gottlieb , B. Lambert‐Andron , F. Nava , M. Affronte , O. Laborde
DOI: 10.1063/1.360707
关键词:
摘要: We investigated some structural and transport properties of semiconducting ReSi2−δ . In the literature this silicides is reported to crystallize in an orthorhombic structure be stoichiometric ReSi2. Our investigations clearly show that stable composition ReSi1.75 crystallizing space group P1. Transport measurements thermally activated behavior at high temperatures with one (or two) energy gap Eg=0.16 (0.30 eV). also report Hall‐effect on material: we found RH positive between 30 660 K room temperature Hall number nH=1/eRH equal 3.7×1018 cm−3. The mobility relatively (μH=370 cm2/V s) for a single crystal.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(14)
Boris I. Shklovskii, Alex L. Efros, Electronic properties of doped semiconductors ,(1984)
I. M. Chapnik, Atomic-volume deviations in transition metal silicides and the electrical properties of rhenium disilicide Physica Status Solidi (a). ,vol. 58, pp. K193- K198 ,(1980) , 10.1002/PSSA.2210580267
T Siegrist, F Hulliger, G Travaglini, The crystal structure and some properties of ReSi2 Journal of The Less Common Metals. ,vol. 92, pp. 119- 129 ,(1983) , 10.1016/0022-5088(83)90233-3
Bijan K. Bhattacharyya, D. M. Bylander, Leonard Kleinman, Fully relativistic energy bands and cohesive energy of ReSi2. Physical Review B. ,vol. 33, pp. 3947- 3951 ,(1986) , 10.1103/PHYSREVB.33.3947
J.L. Jorda, M. Ishikawa, J. Muller, Phase relations and superconductivity in the binary Re-Si system Journal of The Less Common Metals. ,vol. 85, pp. 27- 35 ,(1982) , 10.1016/0022-5088(82)90055-8
C. Krontiras, L. Grönberg, I. Suni, F.M. d'Heurle, J. Tersoff, I. Engström, B. Karlsson, C.S. Petersson, Some properties of ReSi2 Thin Solid Films. ,vol. 161, pp. 197- 206 ,(1988) , 10.1016/0040-6090(88)90251-9
Satoshi Itoh, Electronic structures of refractory metal disilicides in C11b structure Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 6, pp. 37- 41 ,(1990) , 10.1016/0921-5107(90)90112-O
F. Nava, T. Tien, K. N. Tu, Temperature dependence of semiconducting and structural properties of Cr‐Si thin films Journal of Applied Physics. ,vol. 57, pp. 2018- 2025 ,(1985) , 10.1063/1.334389
R.G. Long, M.C. Bost, John E. Mahan, Optical and electrical properties of semiconducting rhenium disilicide thin films Thin Solid Films. ,vol. 162, pp. 29- 40 ,(1988) , 10.1016/0040-6090(88)90190-3
O. Thomas, J.P. Senateur, R. Madar, O. Laborde, E. Rosencher, Molybdenum disilicide: Crystal growth, thermal expansion and resistivity Solid State Communications. ,vol. 55, pp. 629- 632 ,(1985) , 10.1016/0038-1098(85)90827-0