作者: MÖBUS , WAGNER
DOI: 10.1046/J.1365-2818.1999.00477.X
关键词:
摘要: Using an interface between Cu/Ti as example, two HREM-based image analysis techniques, strain mapping and iterative digital matching, are compared. The validity limit of these techniques is discussed a function specimen thickness microscope technology. Two criteria used to assess the limits: (i) difference geometric phase maps, one calculated in plane object plane, (ii) from HREM simulations structure models differing atomic column. latter displays overall delocalisation information by due diffraction imaging. It outlined how far images obtained for high-voltage microscopy at 1250 kV CS correction 200 kV, identical. Both exhibit significantly increased regime applicability near defect cores. Simulations 400 kV 300 kV FEGTEM with without focal series reconstruction complement study.