Atomic layer deposition of a MoS2 film
作者： Lee Kheng Tan , Bo Liu , Jing Hua Teng , Shifeng Guo , Hong Yee Low
DOI: 10.1039/C4NR02451F
关键词:
摘要: … The dosing conditions for the MoCl 5 precursor are: a 5 s exposure time, 5 s dwelling time and 30 s N 2 purging time. The H 2 S precursor has a 0.1 s exposure time, 5 s dwelling time …
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