Fabrication of a–Si:H films by coaxial line type microwave hydrogen plasma CVD

摘要: A double tubed coaxial line type microwave plasma CVD system has been developed for a-Si:H film deposition using hydrogen and argon gases with pure SiH4 gas as the material gas. The quality was evaluated a function of condition. Since spreads plasmas were in range 2-3 cm 8-9 cm, respectively, substrate placed 10 from end discharge tube to avoid bombardment by high-energy particles. fabricated under showed superior characteristics. deposited at temperature between 150 200°C high quality; predominantly SiH bond rather than SiH2 bond, large value photo-dark conductivity ratio (σp/σd − 105) small density dangling bonds. A high-quality can be because amount radicals covers surface, thereby causing thermal structural relaxation silane radicals. This results when increase their surface mobility after soft landing on surface.