Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure
作者： H. Khmissi , M. Baira , L. Sfaxi , L. Bouzaïene , F. Saidi
DOI: 10.1063/1.3555100
关键词:
摘要: Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect carrier transfer behavior on luminescence self-assembled dots, a series sample has been prepared using molecular beam epitaxy (Riber 32 system) which we have varied thickness separating delta dopage and layer. Photoluminescence spectra show existence two peaks that can be attributed to transition energies from ground state (E1-HH1) first excited (E2-HH2). Two antagonist effects observed, blue shift emission result electron transferred heterojunction red caused by confined Stark due internal electric field existing In heterojunction.
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