BTO/GaN heterostructure based on Schottky junction for high-temperature selective ultra-violet photo detection

摘要: Ferroelectric/semiconductor heterostructures have attracted great interest for future optoelectronic and electronic devices due to ferroelectric polarization induced interfacial charge coupling at the junction. Here, we report on fabrication of GaN/BaTiO3 (GaN/BTO) heterostructure based Schottky junction c-sapphire using pulsed laser deposition its performance in UV detection. The Schottky-type BTO/GaN heterojunction high temperature selective ultraviolet photo detection is demonstrated ranging from 313 423 K. temperature-dependent parameters such as responsivity (R λ ), sensitivity (S), specific detectivity (D *), barrier height ( b) ideality factor (η) device been quantified. Calculated are systematically compared with effect dark light. increases respect up 413 K then decrease. highest (λ = 360 nm) found be 45.54 45.21 A W−1, 393 respectively under +5 V bias. increased increasing presence well light while decrease both cases. Overall, efficiency optimized We observed GaN applied