作者: Alina Samusenko , Davide Gandolfi , Georg Pucker , Tatevik Chalyan , Romain Guider
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摘要: In this paper, we report on the design, fabrication, and characterization of a photonic circuit for biosensing applications. Silicon oxynitride with bulk refractive index 1.66 is core-layer material. The optimized wavelength ∼850 nm, which allows on-chip integration light source via cost effective vertical-cavity surface-emitting lasers detector by using standard silicon photodetectors. Design as well fabrication processes are explained in details. best characteristics single optical components are: single-mode channel waveguides dimensions 350 nm × 950 nm; propagation losses 0.8 dB/cm; bending 0.1 dB/90°-bend (radius curvature 100 μm); 49/51 splitting ratio 3-dB power splitters (directional couplers); quality factors up to 1.3 105 microring resonators. Volumetric sensing yields sensitivity 80 nm/RIU limit detection 3 10−6 RIU. Therefore, SiON-based circuits represent reliable material platform short-wave near infrared region.