Effects of CDW Motion on the Electric and Elastic Properties of (TaSe4)2I
作者： Atsushi Suzuki , Hiroshi Mizubayashi , Shigeo Okuda
DOI: 10.1143/JPSJ.57.4322
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摘要: Electrical resistance, R , Young's modulus, E and internal friction, Q -1 in (TaSe 4 ) 2 I were measured simultaneously as functions of temperature dc-electric field strength, using a resonant flexural vibration technique. The CDW elasticity around the phase transition was investigated, predicted scaling relation partly found. Change due to motion is always accompanied by change . In addition nonlinear conductivity just above threshold dc-bias, V T (9.5 mV(41 mV·cm at 250 K), transient behavior found below very low 0 ( 0.3 K). former attributed reversible atomic rearrangement domain walls, latter some viscous impurity atoms or lattice defects relative neighboring chains. dependence between 120 K follow relation, ∝ ...
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