作者: JS Wu , CL Jia , K Urban , JH Hao , XX Xi
DOI: 10.1080/01418610208239997
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摘要: Abstract We studied the microstructure of {111} planar defects, including stacking faults and nanotwins, in SrRuO3 buffer layer SrTiO3/SrRuO3 two-layer films on LaAlO3 substrates by means high-resolution transmission electron microscopy. Most defects stop propagation mutual intersection with one another as well themselves without intersection. Single Frank or Shockley partial dislocations are found at terminating end an isolated fault. show several types dislocation barrier formed two when extended changes its gliding-climbing plane. The formation mechanism barriers is discussed basis reactions between bounding faults. also a nanotwin transition to extrinsic fault dislocation. contribution strain relaxation SrRu...