Damage evolution of ion irradiated defected-fluorite La2Zr2O7 epitaxial thin films
作者： Tiffany C. Kaspar , Jonathan G. Gigax , Lin Shao , Mark E. Bowden , Tamas Varga
DOI: 10.1016/J.ACTAMAT.2017.01.012
关键词:
摘要: Abstract Pyrochlore-structure oxides, A2B2O7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning a defected fluorite structure. The mechanism of defect formation was explored evaluating damage behavior high quality epitaxial La2Zr2O7 thin films structure, irradiated 1 MeV Zr+ at doses up 10 displacements per atom (dpa). level film evaluated as function dose Rutherford backscattering spectrometry in channeling geometry (RBS/c) and scanning transmission electron microscopy (STEM). At lower doses, surface amorphized, amorphous fraction fit well stimulated amorphization model. As increased, slowed, appeared interface. Even dpa, core remained crystalline, despite prediction from To inform future ab initio simulations La2Zr2O7, bandgap thick measured be indirect 4.96 eV, direct transition 5.60 eV.
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