The study of Ga+ FIB implanting crystal silicon and subsequent annealing
作者： YJ Xiao , FZ Fang , ZW Xu , W Wu , XC Shen
DOI: 10.1016/J.NIMB.2012.12.112
关键词:
摘要: Abstract The FIB Ga+ irradiation damage on Si substrate under different ion dose ranging from 1013 ions·cm−2 to 1017 and its effective recovery were studied. Based the characterization results of XPS depth profiles, Raman, electron microscopy AFM, implantation damage’s evolution after annealing treatment have been comprehensively demonstrated. concentration distribution implanted Ga was changed with doses peak moved surface as increased. When area is high 1.5 × 1017 ions·cm−2, an Ga-rich layer up 40 at.% formed at top amorphous layer, where atoms migrated enable clustering. mechanism FIBI serving etching mask discussed based analysis. After 800 °C for 30 min, Raman 520 cm−1 completely regained samples doses, even large 2.7 × 1017 produced defects point silicon could gain sufficient energy recrystallize.
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