Gallium staining in FIB repair of photomasks
作者： PD Prewett , AW Eastwood , GS Turner , JG Watson
DOI: 10.1016/0167-9317(93)90053-8
关键词: Photomask 、 Absorption (chemistry) 、 Opacity 、 Staining 、 Plasma etching 、 Stain 、 Focused ion beam 、 Analytical chemistry 、 Optoelectronics 、 Materials science 、 Gallium
摘要: Abstract Focused ion beam repair of opaque defects in photomasks using Ga+ions, produces a stain which may be measured purpose built photometric system. A simple model for the absorption due to implanted gallium has been developed. The removed by an RIE plasma etch process, combined with chemical cleaning restores relative fractional transmission 100%.
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