作者: Zheng Cui , Philip D Prewett , John G Watson
DOI: 10.1016/0167-9317(95)00313-4
关键词: Materials science 、 Focused ion beam 、 Photolithography 、 Phase (waves) 、 Halftone 、 Optics 、 Sputtering 、 Phase-shift mask 、 Trench 、 Gallium
摘要: Abstract Two new methods have been proposed to optimize the focused ion beam (FIB) technique for repair of phase shift masks (PSMs). The alternating box method is used eliminate post FIB trench defect and biased gallium staining effect. Both require only a change sputtering or scanning strategy. Rim, halftone embedded PSMs contact hole poly line features with programmed defects fabricated repaired by methods. Computer simulation experimental photolithography confirmed that opaque can be optimized without leaving any “ghost” defects.