Molecular dynamics simulation of surface deformation via Ar+ ion collision process
作者： S. Satake , S. Momota , A. Fukushige , S. Yamashina , M. Shibahara
DOI: 10.1016/J.NIMB.2011.01.021
关键词: Cluster (physics) 、 Ion 、 Molecular dynamics 、 Sputtering 、 Molecular physics 、 Fluence 、 Silicon 、 Crystal structure 、 Atomic physics 、 Amorphous solid 、 Chemistry
摘要: Abstract We have carried out molecular dynamics (MD) simulations of 50 keV accelerated Ar ions, colliding with a Si surface. Using this procedure the amorphous structural region was found to expand progression interface region, that lie between structure and crystalline structure, as fluence increased in depth direction. There has been considerable interest studying time development behavior sputtered silicon atoms after being subjected collisions ions. Here, by tracking computational domain, clusters formed during sputtering are classified under various kinds. In process small cluster e.g., monomer dimer, large forms hillocks where smaller their energy higher than cluster.
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sci-hub.se 参考文章(17)
J. Taniguchi, J. Yokoyama, M. Komuro, H. Hiroshima, I. Miyamoto, Beam-assisted-etching technique for fabrication of single crystal diamond field emitter tip Microelectronic Engineering. ,vol. 53, pp. 415- 418 ,(2000) , 10.1016/S0167-9317(00)00346-4
Jun Taniguchi, Kentaro Koga, Yasuo Kogo, Iwao Miyamoto, Rapid and three-dimensional nanoimprint template fabrication technology using focused ion beam lithography Microelectronic Engineering. ,vol. 83, pp. 940- 943 ,(2006) , 10.1016/J.MEE.2006.01.101
James F. Ziegler, M.D. Ziegler, J.P. Biersack, SRIM – The stopping and range of ions in matter (2010) Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 268, pp. 1818- 1823 ,(2010) , 10.1016/J.NIMB.2010.02.091
Shinji Nagamachi, Focused ion beam direct deposition and its applications Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 16, pp. 2515- 2521 ,(1998) , 10.1116/1.590201
T. S. Yeoh, N. A. Ives, N. Presser, G. W. Stupian, M. S. Leung, J. L. McCollum, F. W. Hawley, Focused ion beam tomography of a microelectronic device with sub-2-nm resolution Journal of Vacuum Science & Technology B. ,vol. 25, pp. 922- 925 ,(2007) , 10.1116/1.2740288
Shinji Matsui, Takashi Kaito, Jun-ichi Fujita, Masanori Komuro, Kazuhiro Kanda, Yuichi Haruyama, Three-dimensional nanostructure fabrication by focused-ion-beam chemical vapor deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 18, pp. 3181- 3184 ,(2000) , 10.1116/1.1319689
K. Murakami, T. Matsuo, F. Wakaya, M. Takai, Electron wave interference induced by electrons emitted from Pt field emitter fabricated by focused-ion-beam-induced deposition Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. ,vol. 28, ,(2010) , 10.1116/1.3333440
J. Brugger, G. Beljakovic, M. Despont, N.F. de Rooij, P. Vettiger, Silicon micro/nanomechanical device fabrication based on focused ion beam surface modification and KOH etching Microelectronic Engineering. ,vol. 35, pp. 401- 404 ,(1997) , 10.1016/S0167-9317(96)00210-9
Zheng Cui, Philip D Prewett, John G Watson, Optimization of FIB methods for phase shift mask defect repair Microelectronic Engineering. ,vol. 30, pp. 575- 578 ,(1996) , 10.1016/0167-9317(95)00313-4
Takahiko Morita, Reo Kometani, Keiichiro Watanabe, Kazuhiro Kanda, Yuichi Haruyama, Takayuki Hoshino, Kazushige Kondo, Takashi Kaito, Toshinari Ichihashi, Jun-ichi Fujita, Masahiko Ishida, Yukinori Ochiai, Tsutomu Tajima, Shinji Matsui, Free-space-wiring fabrication in nano-space by focused-ion-beam chemical vapor deposition Journal of Vacuum Science & Technology B. ,vol. 21, pp. 2737- 2741 ,(2003) , 10.1116/1.1630329