Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors
作者： Xifeng Li , Qian Li , Enlong Xin , Jianhua Zhang
DOI: 10.1007/S10971-012-2916-2
关键词:
摘要: Indium–zinc oxide (IZO) thin films were fabricated by spin coating using acetate- and nitrate-based precursors, film transistors (TFTs) further employing the IZO as active channel layer. The impact of indium concentration on properties solutions, structure optical transmittance TFTs device researched in this article. with amorphous obtained when annealing temperature is 500 °C. could reach ~90 % (including glass substrate) during visible region 400–760 nm. Higher can improve TFTs’ filed effect mobility. A Ion–Ioff 6.0 × 106 a mobility 0.13 cm2/Vs 60 %. performance deteriorate more than
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