作者: Kwanyong Seo , Kumar S. K. Varadwaj , Dongkyu Cha , Juneho In , Jiyoung Kim
DOI: 10.1021/JP071707B
关键词:
摘要: Free-standing CrSi2 nanowires are synthesized by a vapor transport based method for the first time. High-quality with hexagonal cross section produced reaction of CrCl2 precursor and Si substrate without using any metal catalyst. We have studied crystal structure electrical properties nanowires. Transmission electron microscopy X-ray diffraction studies confirm single-crystalline nature C40 type structure. Four-probe devices were fabricated focused ion beam equipped nanomanipulator. Measured resistivity nanowire is 0.012 Ω·cm, which close to that bulk CrSi2.