Impact of parasitic elements on CMOS charge pumps: a numerical analysis
作者： L. Gobbi , A. Cabrini , G. Torelli
DOI: 10.1109/ISCAS.2006.1693287
关键词:
摘要: In this work, a numerical method for the evaluation of topological properties integrated CMOS charge pumps is presented. The analysis based on matrix description pump, which used to define network during different operating phases. proposed allows contribution non idealities structure (in particular, parasitic elements) be accurately taken into account. This way, complete pump behavior can obtained. Furthermore, since voltage at any internal node evaluated, overall power efficiency also calculated, thus allowing comparison between topologies. formulation has been automated by computer implementation and easily adapted analyze several structures with number capacitors switches. A circuit simulator results confirms effectiveness method.
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