Interface void monitoring in a damascene process
作者： Peter Hübler , Volker Kahlert , Eckhard Langer , Frank Koschinsky
DOI:
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摘要: For determining the quality of interconnections in integrated circuits, especially damascene applications, a method monitoring voids is disclosed, wherein barrier metal layer directly deposited on planarized to provide large-area surface that not required be destroyed for further analysis interface between and layer. The may carried out by employing an electron microscope operated back-scatter mode.
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