High density capping layers with improved adhesion to copper interconnects

摘要: The adhesion of a barrier or capping layer to Cu alloy interconnect member is significantly enhanced by depositing the under high density plasma conditions at an elevated temperature, such as about 450° C. 650° C., e.g. 550° High deposition temperatures increases surface roughness exposed metallization, thereby increasing deposited layer, silicon nitride and improving its etch stop characteristics. Embodiments present invention include treating after CMP in hydrogen-containing plasma, on treated surface.