Method of forming a copper diffusion barrier
作者： Srinivasan Sundararajan , Mayur Trivedi
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摘要: A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and effective in preventing the migration or diffusion of metal copper atoms through SiCN layer. The can be used as barrier between portion (such line via) an insulating dielectric to prevent atom into dielectric. also etchstop passivation applied variety ways, including PECVD (e.g., using SiH 4 , CH NH 3 ) HDP CVD C 2 H N ).
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