Memory structure and manufacturing method thereof
作者： Hsiao Hsueh-Chun , Wang Chuan-Fu , Yeh Yu-Huang , Chang Tzu-Yun
DOI:
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摘要: A memory structure including a substrate, first gate structure, second spacer, and third spacer is provided. The includes charge storage layer. layer disposed between the substrate. on gate. height of higher than are respectively one sidewall other structure. located covers portion top surface
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