Technology of polycrystalline diamond thin films for microsystems applications
作者： Yuxing Tang , Dean M. Aslam
DOI: 10.1116/1.1926290
关键词:
摘要: Large area and uniform polycrystalline diamond (poly-C) thin films, with a thickness of approximately 1μm, were grown patterned on 4in. oxidized Si wafers using IC compatible processes for microsystems applications. Uniform reproducible seeding density 2×1010∕cm2 was achieved by spinning powder loaded water wafers. Gas mixture 1.5% methane in hydrogen used MPCVD system film growth optimized pressure microwave power. Thickness variation less than 20% the 43Torr 2.8kW Electron cyclotron resonance (ECR)-assisted plasma reactive ion etch carried out SF6∕O2∕Ar gases to pattern films an rate around 80nm∕min 10% over area.
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