An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs
作者： Akil K. Sutton , Marco Bellini , John D. Cressler , Jonathon A. Pellish , Robert A. Reed
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摘要: We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs. The approach is based on the inclusion of an alternate reverse-biased pn junction (n-ring) designed to shunt electron charge away from sub-collector substrate junction. n-ring affects neither DC nor AC performance HBT and does not compromise its inherent multi-Mrad TID tolerance. effects ion strike location angle incidence, as well placement, area, bias collection are investigated experimentally using a 36 MeV O2 microbeam. results indicate that shunting through can result up 90% reduction collector collected strikes outside DT 18% emitter center. 3-D transient simulations NanoTCAD used verify experimental observations, shed insight into underlying physical mechanisms. Circuit implications this RHBD technique discussed recommendations made.
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B.L. Doyle, K.M. Horn, D.S. Walsh, F.W. Sexton, Single event upset imaging with a nuclear muprobe Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. ,vol. 64, pp. 313- 320 ,(1992) , 10.1016/0168-583X(92)95487-C
G. Vizkelethy, B.L. Doyle, D.K. Brice, P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, Radiation effects microscopy for failure analysis of microelectronic devices Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 231, pp. 467- 475 ,(2005) , 10.1016/J.NIMB.2005.01.102
B. Jagannathan, M. Khater, F. Pagette, J.-S. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D.R. Greenberg, R. Groves, S.J. Jeng, J. Johnson, E. Mengistu, K.T. Schonenberg, C.M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna, Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology IEEE Electron Device Letters. ,vol. 23, pp. 258- 260 ,(2002) , 10.1109/55.998869
K.M. Murray, W.J. Stapor, C. Casteneda, Calibrated charged particle radiation system with precision dosimetric measurement and control Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment. ,vol. 281, pp. 616- 621 ,(1989) , 10.1016/0168-9002(89)91498-8
P.E. Dodd, M.R. Shaneyfelt, F.W. Sexton, Charge collection and SEU from angled ion strikes IEEE Transactions on Nuclear Science. ,vol. 44, pp. 2256- 2265 ,(1997) , 10.1109/23.659044
P.W. Marshall, M.A. Carts, A. Campbell, D. McMorrow, S. Buchner, R. Stewart, B. Randall, B. Gilbert, R.A. Reed, Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates IEEE Transactions on Nuclear Science. ,vol. 47, pp. 2669- 2674 ,(2000) , 10.1109/23.903824
R.A. Reed, P.W. Marshall, J.C. Pickel, M.A. Carts, B. Fodness, Guofu Niu, K. Fritz, G. Vizkelethy, P.E. Dodd, T. Irwin, J.D. Cressler, R. Krithivasan, P. Riggs, J. Prairie, B. Randall, B. Gilbert, K.A. LaBel, Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits IEEE Transactions on Nuclear Science. ,vol. 50, pp. 2184- 2190 ,(2003) , 10.1109/TNS.2003.821815
D.M. Schmidt, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease, R.J. Graves, G.H. Johnson, K.F. Galloway, W.E. Combs, Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs IEEE Transactions on Nuclear Science. ,vol. 42, pp. 1541- 1549 ,(1995) , 10.1109/23.488748
Guofu Niu, Hua Yang, M. Varadharajaperumal, Yun Shi, J.D. Cressler, R. Krithivasan, P.W. Marshall, R. Reed, Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs IEEE Transactions on Nuclear Science. ,vol. 52, pp. 2153- 2157 ,(2005) , 10.1109/TNS.2005.860744
J.D. Black, A.L. Sternberg, M.L. Alles, A.F. Witulski, B.L. Bhuva, L.W. Massengill, J.M. Benedetto, M.P. Baze, J.L. Wert, M.G. Hubert, HBD layout isolation techniques for multiple node charge collection mitigation IEEE Transactions on Nuclear Science. ,vol. 52, pp. 2536- 2541 ,(2005) , 10.1109/TNS.2005.860718