Excimer laser induced deposition of tungsten on silicon
作者： A.J.P. Van Maaren , R.L. Krans , E. De Haas , W.C. Sinke
DOI: 10.1016/0169-4332(89)90558-8
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摘要: Abstract In this paper a new high vacuum apparatus for laser chemical vapor deposition (LCVD) of tungsten on silicon is presented. It features fast sample transfer system and nitrogen window purge to prevent the entrance exit windows. Tungsten films grown in reactor, using WF 6 H 2 as reaction gasses an ArF (193 nm) excimer activation source, are shown have near bulk resistivity (9.5 μΩ cm at 400°C). The W coverage increases linearly with laser-pulse frequency growth appears be thermally activated fixed pulse frequency. RBS spectra indicate that thickness variations considerably smaller formed by LCVD than purely thermal CVD.
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