作者: D. V. Nirmal Ramaswamy
DOI:
关键词:
摘要: A charge-retaining transistor includes a control gate and an inter-gate dielectric alongside the gate. charge-storage node of first semiconductor material dielectric. Islands charge-trapping are material. An oxidation-protective is islands. Second material, some different composition from that Tunnel node. Channel tunnel Additional embodiments, including methods, disclosed.