Charge-retaining transistor, array of memory cells, and methods of forming a charge-retaining transistor

作者: D. V. Nirmal Ramaswamy

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摘要: A charge-retaining transistor includes a control gate and an inter-gate dielectric alongside the gate. charge-storage node of first semiconductor material dielectric. Islands charge-trapping are material. An oxidation-protective is islands. Second material, some different composition from that Tunnel node. Channel tunnel Additional embodiments, including methods, disclosed.

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