Method for forming a modified crown shaped, dynamic random access memory, (DRAM), capacitor structure
作者： Chin-Hsiang Lin
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摘要: A process for creating a modified crown shaped storage node electrode, DRAM capacitor structure, featuring increased surface area resulting via the addition of silicon hill, to conventional has been developed. thin, narrow insulator shape, is formed, between two wider, thicker shapes. After deposition polysilicon layer, chemical mechanical polishing procedure used form removal from top shapes, while traversing not removed. The shape had previously formed during an anisotropic RIE procedure, using photoresist as etch mask, with being narrower and thinner than counterpart mask patterning
lens.org 参考文章(5)
Tzu-Shih Yen, Kung Linliu, Erik Syangywan Jeng, Method of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacers ,(1996)
Horng-Huei Tseng, Method to fabricate large capacitance capacitor in a semiconductor circuit ,(1997)
Chung-Cheng Wu, Method of making self-aligned cylindrical capacitor structure of stack DRAMS ,(1996)
Horng-Huei Tseng, Method for fabricating a cylindrical capacitor for a semiconductor device ,(1996)
Haruo Iwasaki, Method of producing cylindrical storage node of stacked capacitor in memory cell ,(1997)