Method of forming a protected crown capacitor structure utilizing the outside crown surface to increase capacitance

摘要: A method of forming a DRAM capacitor structure featuring increased surface area, has been developed. The features polysilicon top plate located overlying an array comprised individual storage node structures. Each is with tall, vertical features, and additional area obtained via removal butted insulator layer from first group surfaces the Insulator remains to second prevent collapse structures during subsequent processing sequences.