Semiconductor non-volatile memory device and method of manufacturing the same
作者： Daisuke Tohyama , Hidemitsu Ogura , Masataka Takebuchi
DOI:
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摘要: According to this invention, a semiconductor non-volatile memory device includes substrate, insulating films formed on the substrate and having at least two types of gate different thicknesses first conductive film electrically floating from through films. These include said diffusion layer conductivity type second layer, opposite type, which is isolated layer. The A part between constituted by third thickness smaller than that film.
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