Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation
作者： Toshiro Hiramoto , Kazuhiko Hirakawa , Yasuhiro Iye , Toshiaki Ikoma
DOI: 10.1063/1.101177
关键词:
摘要: The phase coherence length Lφ of electron waves in the one‐dimensional weak localization regime was studied selectively doped AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation. Estimated fitting modified theory to data is ∼1.2 μm at 0.3 K, nine times longer than n‐GaAs wires. This difference well explained mobility dependence Lφ, and shows advantage structures obtain long Lφ. increased with decreasing temperature saturated below ∼3 indicating existence temperature‐independent breaking mechanisms.
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