Characterization of methylated amorphous silicon by IR and Raman spectroscopies

摘要: Abstract IR and Raman spectra of samples produced by glow discharge deposition from silane-methane mixtures in the low power regime with various carbon concentrations on silicon substrates, were recorded analyzed. Evidence SiCH3 groups was provided presence CH3 stretching bands as well deformation rocking vibrations. It is shown that very material contains SiH groups, while at high SiH2 are present an amorphous network. Therefore, a mechanism incorporation can be deduced, probable chemical structures suggested for methylated silicon.