Room-temperature deposition of a-SiC:H thin films by ion-assisted plasma-enhanced CVD
作者： Dong S Kim , Young H Lee
DOI: 10.1016/0040-6090(96)08820-7
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摘要: Abstract Tetramethylsilane (TMS) diluted highly with hydrogen is used for depositing a-SiC:H thin films at room temperature under varying degrees of ion bombardment in a 13.56 MHz r.f.-powered, asymmetrical plasma reactor. An impedance analysis to estimate apparent energy and other parameters such as electron density the degree ionization. The obtained high show densities comparable those deposited temperatures; are transparent most visible IR regions; resistant etching buffered HF solution; exhibit excellent adhesion various substrates including silicon wafer, quartz, aluminum, polymers polycarbonate polyimide. FTIR studies bond structures depending on level bombardment. When flux increased, content film decreases crosslinking appears increase.
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