Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect
作者： H. Ou , K. Rottwitt
DOI: 10.1007/S00340-008-3348-0
关键词:
摘要: Germanium (Ge) nanocrystals embedded in silica matrix is an interesting material for new optoelectronic devices. In this paper, standard silica-on-silicon waveguides with a core doped by Ge were fabricated using plasma enhanced chemical vapour deposition and reactive ion etching. The cross-sectional waveguide structures investigated scanning electron microscopy. Transmission of the was measured broadband light source covering wavelength range from 500 nm to 1700 nm, results compared against transmission through waveguide. Strong absorption peaks at 1056.8 1263.2 1406 observed. These are assigned quantum confinement effect core. Putting enables easy characterisation potential application integrated lightwave circuit device.
core.ac.uk
springer.com
harvard.edu
sci-hub.se 参考文章(31)
M. Y. Chan, P. S. Lee, V. Ho, H. L. Seng, Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications Journal of Applied Physics. ,vol. 102, pp. 094307- ,(2007) , 10.1063/1.2803883
S Ağan, A Dana, A Aydinli, TEM studies of Ge nanocrystal formation in PECVD grown SiO2:Ge/SiO2 multilayers Journal of Physics: Condensed Matter. ,vol. 18, pp. 5037- 5045 ,(2006) , 10.1088/0953-8984/18/22/004
H G Chew, F Zheng, W K Choi, W K Chim, Y L Foo, E A Fitzgerald, Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix Nanotechnology. ,vol. 18, pp. 065302- ,(2007) , 10.1088/0957-4484/18/6/065302
C. Bulutay, Interband, intraband, and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice Physical Review B. ,vol. 76, pp. 205321- ,(2007) , 10.1103/PHYSREVB.76.205321
C.L. Heng, Y.J. Liu, A.T.S. Wee, T.G. Finstad, The formation of Ge nanocrystals in a metal insulator semiconductor structure and its memory effect Journal of Crystal Growth. ,vol. 262, pp. 95- 104 ,(2004) , 10.1016/J.JCRYSGRO.2003.10.068
A. V. Kolobov, S. Q. Wei, W. S. Yan, H. Oyanagi, Y. Maeda, K. Tanaka, Formation of Ge nanocrystals embedded in aSiO2matrix: Transmission electron microscopy, x-ray absorption, and optical studies Physical Review B. ,vol. 67, pp. 195314- ,(2003) , 10.1103/PHYSREVB.67.195314
Q. Wan, C. L. Lin, N. L. Zhang, W. L. Liu, G. Yang, T. H. Wang, Linear and third-order nonlinear optical absorption of amorphous Ge nanoclusters embedded in Al2O3 matrix synthesized by electron-beam coevaporation Applied Physics Letters. ,vol. 82, pp. 3162- 3164 ,(2003) , 10.1063/1.1573332
A Markwitz, B Schmidt, W Matz, R Grötzschel, A Mücklich, Microstructural investigation of ion beam synthesised germanium nanoclusters embedded in SiO2 layers Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 142, pp. 338- 348 ,(1998) , 10.1016/S0168-583X(98)00283-3
K.H Heinig, B Schmidt, A Markwitz, R Grötzschel, M Strobel, S Oswald, Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 148, pp. 969- 974 ,(1999) , 10.1016/S0168-583X(98)00862-3
M. Kanoun, C. Busseret, A. Poncet, A. Souifi, T. Baron, E. Gautier, Electronic properties of Ge nanocrystals for non volatile memory applications Solid-state Electronics. ,vol. 50, pp. 1310- 1314 ,(2006) , 10.1016/J.SSE.2006.07.006