High-Temperature Characterization of Silicon Dioxide Films with Wafer Curvature
作者： S. Bigl , W. Heinz , M. Kahn , H. Schoenherr , M. J. Cordill
DOI: 10.1007/S11837-015-1600-8
关键词:
摘要: Amorphous silicon dioxide films used as dielectric layers in microelectronic devices are deposited using plasma-enhanced chemical vapor deposition. Because of the presence hydrogen and nitrogen species precursor gases, incorporation such can lead to crack formation during subsequent annealing processes up 1000°C. In this study, role film chemistry on thermo-mechanical behavior is studied with situ stress measurements wafer curvature maximum temperatures This a significant advance because normal only reach around 500°C. The increased temperature range allows for evolution be examined relevant processing conditions. It was found that at higher than 550°C, bond cleavage led large increase change due new bonding arrangements between well densification causing cracking films. These changes could identified
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