作者: Kiyoshi Kato
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摘要: Provided is a nonvolatile memory that realizes high-speed verify operation. During writing/erasing, the writing/erasing and reading are performed at same time. As to circuit performs operation, for instance, there obtained construction where output from sense amplifier ( 102 ) connected switch which switches an operation voltage applied cell in accordance with signal Sv, finished concurrently having Sv switched. By obtaining such simultaneously performing reading, it becomes possible perform writing/erasing.