作者: D. J. Li , Murat U. Guruz , C. Singh Bhatia , Yip-Wah Chung
DOI: 10.1063/1.1498866
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摘要: Carbon nitride films were grown on silicon and hard disk substrates using pulsed dc magnetron sputtering in a single-cathode deposition system. Substrates mounted specially designed holder that allowed 45° tilt angle substrate rotation about the surface normal up to 20 rpm. The influence of bias, tilt, film growth properties was studied. Films with lowest rms roughness corrosion performance obtained at −100 V bias rotation. Atomic force microscope scans over 10×10 μm2 sampling areas showed 50 nm thick CNx prepared under these conditions have almost four times lower than those without We observed twofold reduction damage for 1 overcoats deposited This improved is likely result more efficient uniform momentum transfer parallel during this configuration.