Modification of zirconia film properties by low‐energy ion bombardment during reactive ion‐beam deposition

摘要: The effect of low‐energy ion bombardment on the structure and properties zirconia films deposited by reactive ion‐beam process is investigated. Bombardment 100‐eV Ar+ during film growth shown to induce a substantial relaxation residual stress as result structural modification increased mobility adatoms. Concurrently, oxygen gettering capability, or stoichiometry, improved enhanced diffusion substrate surface. change thermal annealing, up 600 °C, demonstrates that fine‐grained (200–400 A) cubic can be stabilized down room temperature without alloying stabilizers. impingement results in an as‐deposited microstructure which promotes cubic‐phase crystallites upon post‐deposition annealing well texturing plane into (111) orientation. refractive index optical transmission are dependent predomina...