InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells
作者： Oscar Martínez , Vanesa Hortelano , Vicente Parra , Juan Jimenez , Tatiana Prutskij
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摘要: InGaP layers grown on (111)Ga and (111)As GaAs substrate faces are investigated by microRaman spectroscopy, microphotoluminescence cathodoluminescence. The growth these polar benefits disorder with respect to the (001) faces. It is shown that both result in disordered layers. While present inhomogeneous compositions, homogeneous compositions close lattice matching almost disordered.
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