Graphene films grown at low substrate temperature and the growth model by using MBE technique
作者： Meng-Yu Lin , Wei-Ching Guo , Meng-Hsun Wu , Pro-Yao Wang , Si-Chen Lee
DOI: 10.1016/J.JCRYSGRO.2012.12.068
关键词:
摘要: Abstract By depositing atomic C atoms on the grained Cu foil by using molecular beam epitaxy technique (MBE), high-quality graphene is obtained at low substrate temperature 300 °C. A model of initial flake formation as crystal seeds and following lateral growth established to explain mechanisms. After atom deposition, no significant difference observed before after MBE growth. The results suggest that deposition will not improve crystalline quality pre-formed films. required would be advantageous for practical application graphene.
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