作者: Bing He , Cheng Dong , Lingmin Zeng , Hongrui Liu , Lihong Yang
DOI: 10.1088/0953-2048/21/3/035004
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摘要: V3Si is a well known A15 superconductor with superconducting transition temperature (Tc) value of 17 K. We prepared series V3−2xTixCrxSi (0≤x≤0.2) samples which have the same number electrons per cell as in order to study doping effect. The formation single-phase was confirmed by x-ray diffraction when x≤0.1. It found that lattice parameter decreases slightly increasing dopant concentration. Tc drops slowly x 0.1. drop Ti and Cr co-doped slower than single-element or doped total concentrations, indicating density states at Fermi level, N(EF), plays an important role change Tc. critical current V2.8Ti0.1Cr0.1Si significantly enhanced more six times pure 10 K magnetic fields up 4 T.