Plasma process for development of a bulk heterojunction optoelectronic device: A highly sensitive UV detector
作者： Shyamalima Sharma , Arup R. Pal , Joyanti Chutia , Heremba Bailung , Neelotpal S. Sarma
DOI: 10.1016/J.APSUSC.2012.04.115
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摘要: Abstract Deposition of composite thin film polyaniline/TiO 2 (PAni/TiO ) has been carried out by a combined process magnetron sputtering and plasma polymerization at pressure 5 × 10 −2 Torr using titanium as target material for sputtering, aniline monomer, oxygen reactive gas argon carrier gas/ion source sputtering. The deposition achieved direct current (dc) discharge power 35 W radio frequency (rf) 8–12 W substrate bias values in the ranges −80 to −100 V polymerization. composition studied infrared spectroscopy, Raman spectroscopy well X-ray photoelectron spectroscopy. morphology characterized with help transmission electron microscopy atomic force microscopy. ultraviolet (UV) photo-stability exposing deposited on silicon different reaction times up 1 h under UV radiation wave length range 280–400 nm an intensity 0.4 mW/cm . An organic/inorganic nanocomposite based photovoltaic device developed. aluminum/composite/indium tin oxide sandwiched structure that shows strong photoresponse region hence potential application detector.
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