High throughput measurement of via defects in interconnects
作者： Edgar B. Genio , Jiping Li , Peter G. Borden
DOI:
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摘要: Heat is applied to a conductive structure that includes one or more vias, and the temperature at near point of heat application measured. The measured indicates integrity defectiveness various features (e.g. vias and/or traces) in structure, application. Specifically, higher measurement (as compared reference structure) reduced transfer from application, therefore defect. can be same die as provide baseline) outside but wafer test wafer), depending on embodiment.
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