Potential Induced Degradation on Cell Level: The Inversion Model
作者： P. Saint-Cast , C. Reichel , J. Rentsch , S.W. Glunz , M. Hofmann
DOI: 10.4229/28THEUPVSEC2013-2BO.1.3
关键词:
摘要: The field effect model for potential-induced degradation of p-type crystalline silicon solar cells postulates an inversion the emitter surface. electrical properties layer was evaluated based on theoretical considerations and cell device modeled. Finally, our compared to experimental data. As a result, alone cannot explain observed shunting cells.
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