Submicrometer lithography of a silicon substrate by machining of photoresist using atomic force microscopy followed by wet chemical etching

摘要: In this paper, the atomic force microscope (AFM) is used as a powerful technique for machining and imaging of nonconducting, thick, photoresist. A systematic approach adopted to determine minimum number passes AFM probe tip optimized maximum that could be applied by Si cantilever on photoresist achieve desired modifications. Linear relationships are established corresponding attainable depth. V-grooves fabricated in using high normal forces 5 with transverse speed . With higher manoeuvring , window created without significant irregular undulation at its base. regular depth 60 nm line width 12 successfully silicon machined pattern mask wet preferential etching.