作者: K. J. Bachmann , M. Fearheiley , Y. H. Shing , N. Tran
DOI: 10.1063/1.94791
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摘要: Experimental data on the phase relations in Cu, In, Se system are presented and growth of single crystals CuInSe2 from melt is described. Hall measurements both n‐ p‐type reveal that impurity conduction dominates low‐temperature transport properties. Type conversion by annealing initially n‐type excess selenium vapor leads to a substantial increase compensation level.