In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection

摘要: This invention provides an in situ monitoring technique and apparatus for chemical/mechanical planarization end point detection the process of fabricating semiconductor or optical devices. Fabrication devices often requires smooth planar surfaces, either on surface a wafer being processed at some intermediate stage e.g. interleaved layer. The present is accomplished by means capacitively measuring thickness dielectric layer conductive substrate. measurement involves layer, flat electrode structure liquid interfacing article structure. Polishing slurry acts as liquid. includes electrode, insulator surrounding guard another electrode. In drive voltage supplied to bootstrap arrangement thereby capacitance interest without interferring effect from shunt leakage resistance. are useful not only layers substrates situ, during planarizing polishing, but also other processes, prior after etching process.