作者: Yeon-Keon Moon , Borae Bang , Se-Hyun Kim , Chang-Oh Jeong , Jong-Wan Park
DOI: 10.1007/S10854-007-9375-5
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摘要: Zinc oxide films have been actively investigated as transparent electrode materials for optical displays. We report the effect of working pressure on electrical and properties Al-doped ZnO thin deposited by D.C. magnetron sputtering. The were in pressures ranging from 1 mTorr to 10 mTorr. was determined mechanism explained. To understand relationship between film structure, density, resistivity, carrier concentration, mobility, mean free path band-gap measured a function pressure.